On Sunday night Samsung Electronics
announced that it developed the industry's first 8 gigabit (Gb), low
power double data rate 4 (LPDDR4) mobile DRAM. Fabricated using 20 nm
class process technology, the new chip now makes possible 1 Gigabyte
(GB) on a single die. Four 8 gigabit chips create one 4 GB LPDDR4
package.
"This next-generation LPDDR4 DRAM will contribute significantly to
faster growth of the global mobile DRAM market, which will soon comprise
the largest share of the entire DRAM market," said Young-Hyun Jun,
executive vice president, memory sales & marketing, Samsung
Electronics.
Samsung says the new 8 Gb chip uses a Low Voltage Swing Terminated
Logic (LVSTL) I/O interface, allowing the chip to transfer data at 3200
megabits per second (Mbps) per pin. That's twice the amount the
20nm-class LPDDR3 DRAM can achieve, which is now in mass production.
The new chip also consumes around 40 percent less energy at 1.1 volts.
"With the new chip, Samsung will focus on the premium mobile market
including large screen UHD smartphones, tablets and ultra-slim notebooks
that offer four times the resolution of full-HD imaging, and also on
high-performance network systems," the company announced on Sunday.
News of the 8 Gb chip arrives after Samsung began mass producing
3 GB LPDDR3 mobile DRAM modules back in July. The 3 GB module uses six
20 nm class 4 Gb LPDDR3 chips in a symmetrical structure of two sets of
three chips stacked in a single package only 0.8 millimeters high. The
module is capable of data transfer speeds of up to 2,133 Mbps per pin.
"We will continue introducing the most advanced mobile DRAM one step
ahead of the rest of the industry so that global OEMs can launch
innovative mobile devices with exceptional user convenience in the
timeliest manner," Young-Hyun Jun added.
Looks like 4 GB DDR4 memory chips are heading to future mobile devices.
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